完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Tsai, Y. T. | en_US |
dc.contributor.author | Chang, W. J. | en_US |
dc.contributor.author | Huang, S. W. | en_US |
dc.contributor.author | Lin, J. -Y. | en_US |
dc.contributor.author | Lee, J. Y. | en_US |
dc.contributor.author | Chen, J. M. | en_US |
dc.contributor.author | Wu, K. H. | en_US |
dc.contributor.author | Uen, T. M. | en_US |
dc.contributor.author | Gou, Y. S. | en_US |
dc.contributor.author | Juang, J. Y. | en_US |
dc.date.accessioned | 2014-12-08T15:09:31Z | - |
dc.date.available | 2014-12-08T15:09:31Z | - |
dc.date.issued | 2009-05-01 | en_US |
dc.identifier.issn | 0921-4526 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/j.physb.2008.12.038 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/7275 | - |
dc.description.abstract | The temperature-dependent X-ray absorption near-edge spectroscopy (XANES) of LaMnO(3) thin films doped with various divalent ions was systematically carried out to investigate the effects of the ion size and associated Jahn-Teller distortions (JTDs) on the electronic structure modifications. Doped LaMnO(3) thin films were grown on (100) SrTiO(3) and (110) NdGaO(3) substrates by pulsed-laser deposition with typical thickness of 250-300 nm. Temperature-dependent resistivity p(T) and magnetization M(T) were measured. The results indicate that the drastic changes in magneto-transport properties induced by the substitution of A-site ion and the splitting of the O K-edge pre-edge peak associated with the e(g)(up arrow) and t(2g)(down arrow) energy levels at low temperatures in La(1-x)Ca(x)MnO(3) and La(1-x)Sr(x)MnO(3) (x = 0.3, 0.375) may both relate to the lattice disorder and the associated JTD effects on modifying the electronic structure of doped-LaMnO(3). (C) 2009 Elsevier B.V. All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Temperature-dependent X-ray absorption near edge spectroscopy of doped LaMnO(3): Ion-size and the Jahn-Teller distortion effects | en_US |
dc.type | Review | en_US |
dc.identifier.doi | 10.1016/j.physb.2008.12.038 | en_US |
dc.identifier.journal | PHYSICA B-CONDENSED MATTER | en_US |
dc.citation.volume | 404 | en_US |
dc.citation.issue | 8-11 | en_US |
dc.citation.spage | 1404 | en_US |
dc.citation.epage | 1408 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | 物理研究所 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.contributor.department | Institute of Physics | en_US |
顯示於類別: | 期刊論文 |