標題: Improving Light Output Power of the GaN-Based Vertical-Injection Light-Emitting Diodes by Mg(+) Implanted Current Blocking Layer
作者: Tsai, Min-An
Yu, Peichen
Chen, J. R.
Huang, J. K.
Chiu, C. H.
Kuo, H. C.
Lu, T. C.
Lin, S. H.
Wang, S. C.
電子物理學系
光電工程學系
Department of Electrophysics
Department of Photonics
公開日期: 1-五月-2009
摘要: A method for forming a current blocking layer (CBL) by ion implantation in GaN-based vertical-injection light-emitting diodes (VI-LEDs) was proposed. It was found that the use of CBL in VI-LEDs can effectively reduce the current crowding effect and enhance the light output power. The uniform emission intensity distribution of VI-LEDs with CBL was demonstrated by electroluminescence measurements. Experimental results show that the wall-plug efficiency was enhanced by 12.3% at an injection current of 20 mA, compared to that of VI-LEDs without CBL, and by 56.2% compared to that of conventional LEDs. The device simulation results reveal that the current path can be blocked by CBL, resulting in high light extraction efficiencies and large current densities within the effective emission region of active layers.
URI: http://dx.doi.org/10.1109/LPT.2009.2016431
http://hdl.handle.net/11536/7297
ISSN: 1041-1135
DOI: 10.1109/LPT.2009.2016431
期刊: IEEE PHOTONICS TECHNOLOGY LETTERS
Volume: 21
Issue: 9-12
起始頁: 688
結束頁: 690
顯示於類別:期刊論文