Efficiency Enhancement of GaAs Photovoltaics Employing Antireflective Indium Tin Oxide Nanocolumns

doi:10.1002/adma.200802563

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Yu, Peichen	en_US
dc.contributor.author	Chang, Chia-Hua	en_US
dc.contributor.author	Chiu, Ching-Hua	en_US
dc.contributor.author	Yang, Chin-Sheng	en_US
dc.contributor.author	Yu, Jue-Chin	en_US
dc.contributor.author	Kuo, Hao-Chung	en_US
dc.contributor.author	Hsu, Shih-Hsin	en_US
dc.contributor.author	Chang, Yia-Chung	en_US
dc.date.accessioned	2014-12-08T15:09:36Z	-
dc.date.available	2014-12-08T15:09:36Z	-
dc.date.issued	2009-04-27	en_US
dc.identifier.issn	0935-9648	en_US
dc.identifier.uri	http://dx.doi.org/10.1002/adma.200802563	en_US
dc.identifier.uri	http://hdl.handle.net/11536/7341	-
dc.description.abstract	Highly-oriented indium tin oxide nano-columns are prepared by glancing-angle deposition with nitrogen. The tapered column profiles, which function as a graded-refiractive-index layer, offer superior antireflective characteristics. The nano-structured material serves as the conductive antireflective layer for GaAs solar cells, demonstrating a viable efficiency-boosting strategy for next-generation photovoltaics.	en_US
dc.language.iso	en_US	en_US
dc.title	Efficiency Enhancement of GaAs Photovoltaics Employing Antireflective Indium Tin Oxide Nanocolumns	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1002/adma.200802563	en_US
dc.identifier.journal	ADVANCED MATERIALS	en_US
dc.citation.volume	21	en_US
dc.citation.issue	16	en_US
dc.citation.spage	1618	en_US
dc.citation.epage	+	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000265950500016	-
dc.citation.woscount	99	-
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