深蝕刻布拉格反射鏡面之邊射型半導體Q開關雷射

Abstract

本研究利用乾式深蝕刻製作布拉格反射鏡以取代傳統邊射型半導體雷射的劈裂鏡面，成功達成雷射共振腔長度的微縮，並用於被動式Q開關雷射製作出利於光積體電路整合的短脈衝源。實驗中製作出最短共振腔的雷射為50微米長，在150微米長的元件得到最小臨界電流為4.7毫安培，藉由實驗分析製作出的布拉格反射鏡反射率約為58%，高於一般自然劈裂面的32%，Q開關雷射可調變的頻率範圍從157 MHz至2.37 GHz，脈衝峰值為7.49 mW，脈衝寬度約為110 ps。

In this study, deeply dry-etched Bragg reflectors were fabricated and substituted for cleaved mirrors of conventional edge-emitting semiconductor lasers. The reduction of the laser size was achieved. We also integrated the deeply dry-etched Bragg reflectors with passively Q-switching semiconductor lasers, which will be helpful for the integration with other optical or electronic devices. The shortest cavity length in our experiment results is 50um, and the lowest threshold current is 4.7mA while cavity length is 150um. The reflectivity of the DBR is about 58%, higher than the cleaved mirror which is 32%.And the frequency tuning range of Q-switching laser is about 157MHz to 2.37GHz, laser peak power is 7.49mW, and the pulse width is about 110ps.