分子介面下電流引起的自旋矩

Abstract

我們以第一原理計算的方式來研究原子尺度下的接面系統及自旋相關電子的量子傳輸性質。將鈷放入氮原子和苯環分子接面並加上偏壓後，研究帶電流自旋電子通過磁性原子產生的自旋軌道耦合作用，在不同接面上看到因電流引起的自旋偶極矩和自旋四偶極矩分布在鈷原子上，兩種系統都有自旋向上和自旋向下電子因相對論性的自旋軌道交互作用在鈷原子兩側堆積，並隨偏壓增加強度變強，其效應與自旋霍爾效應相同，自旋霍爾效應已在半導體上被廣泛使用，若能發展分子接面下的自旋霍爾效應，則在奈米尺度元件上，必定有更廣泛的應用和發展。

Using first-principles approaches, the spin-dependent electron quantum transport in an atomic-scale junction under the ballistic quantum transport properties. The spin dipole moment and spin quadrupole moment are observed in atomic-scale junction, formed by a single cobalt atom connecting to two bulk metal electrodes via the nitrogen atoms and the other one is via the benzene molecular. The separation of spin-up and spin-down electron densities are observed around the cobalt atom because Spin-orbit potential of the relativistic atom, and the intensity becomes stronger with biased bulk. The phenomenon likes as Spin Hall Effect. Spin Hall effect has been widely used in the semiconductor, if the development of Spin Hall effect under the molecular junctions, it must be more widely and development in nano-scale electronic component.