SiGe nanorings by ultrahigh vacuum chemical vapor deposition

標題:	SiGe nanorings by ultrahigh vacuum chemical vapor deposition
作者:	Lee, C. -H. Shen, Y. -Y. Liu, C. W. Lee, S. W. Lin, B. -H. Hsu, C. -H. 光電工程學系 Department of Photonics
關鍵字:	annealing;chemical vapour deposition;diffusion;Ge-Si alloys;nanofabrication;Raman spectra;semiconductor growth;semiconductor materials;semiconductor quantum dots;silicon;X-ray diffraction
公開日期:	6-四月-2009
摘要:	Formation of SiGe nanorings from Si capped Si(0.1)Ge(0.9) quantum dots (QDs) grown at 500 degrees C by ultrahigh vacuum chemical vapor deposition was investigated. SiGe nanorings have average diameter, width, and depth of 185, 30, and 9 nm, respectively. Based on both Raman and x-ray diffraction results, the formation of SiGe nanorings can be attributed to Ge outdiffusion from central SiGe QDs during in situ annealing. Moreover, the depth of SiGe nanorings can be controlled by Si cap thickness. The Si cap is essential for nanorings formation.
URI:	http://dx.doi.org/10.1063/1.3116619 http://hdl.handle.net/11536/7374
ISSN:	0003-6951
DOI:	10.1063/1.3116619
期刊:	APPLIED PHYSICS LETTERS
Volume:	94
Issue:	14
結束頁:
顯示於類別：	期刊論文

文件中的檔案：

若為 zip 檔案，請下載檔案解壓縮後，用瀏覽器開啟資料夾中的 index.html 瀏覽全文。