标题: | 使用二氧化矽/氧化铝介电层运用在氮化镓铝/氮化镓 金属-绝缘层-半导体电晶体的研究 Investigation of AlGaN/GaN Metal-Insulator-Semiconductor Transistors Using Al2O3/SiO2 Dielectrics |
作者: | 邱于建 Chiu, Yu-Chien 荆凤德 Albert Chin 光电系统研究所 |
关键字: | 氮化镓铝/氮化镓;高介电系数;二维电子气;AlGaN/GaN;high-k;2DEG |
公开日期: | 2013 |
摘要: | 氮化镓是一种备受期待的半导体材料,因为它可以被应用于高温及高功率元件中,除此之外,氮化镓/氮化铝镓的异质结构因拥有高浓度的二维电子气(2DEG),故具有相当卓越的载子传输特性和极高的电子漂移率。而和氮化镓/氮化铝镓高电子迁移率之电晶体相比,氮化镓/氮化铝镓金氧半电晶体有着更多的优点,包括较正的截止电压、较低的漏电流及在高功率元件上有较优越的耐久性。 和各式新颖的新通道金氧半电晶体相同,氮化镓金氧半电晶体遇到了主要的难题,包括闸极介电层的品质和源/汲极的接触电阻特性。一般为了改善增进传输的品质特性,高介电系数介电层已广泛应用于金氧半电晶体。而我们可制作氮化镓金氧半电晶体使用非掘入式闸级和闸极介电层沉积,最后我们做结果的分析,期许未来可应用在氮化镓元件的制作上。 Gallium nitride (GaN) is a promising material for high temperature and power electronic devices. Besides, AlGaN/GaN hetero-junction has high electron mobility because of the existence of two-dimensional electron gas(2DEG) with high concentration. Compared with AlGaN/GaN HEMTs, the GaN MOSFET has the advantages of positive threshold voltage (Vt), lower leakage current, and superior reliability for power electronics applications. Similar to various new channel MOSFETs , the major challenges for GaN MOSFET are the required high gate dielectric quality and source-drain characteristics. To improve the transistor performance, high-κ gate dielectric has widely implanted into Si CMOS.The favorable source-drain contact with low on-resistance (Ron) can also be formed by piezoelectric-induced electrons in an AlGaN/GaN structure, where the GaN MOSFET is fabricated using non-gate-recess etching and gate dielectric deposition. And we will analyze the results, and hope that the process can be used on GaN in the future. |
URI: | http://140.113.39.130/cdrfb3/record/nctu/#GT079904525 http://hdl.handle.net/11536/73781 |
显示于类别: | Thesis |