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dc.contributor.authorCheng, Jung-Anen_US
dc.contributor.authorChuang, Chiao-Shunen_US
dc.contributor.authorChang, Ming-Nungen_US
dc.contributor.authorTsai, Yun-Chuen_US
dc.contributor.authorShieh, Han-Ping D.en_US
dc.date.accessioned2014-12-08T15:09:46Z-
dc.date.available2014-12-08T15:09:46Z-
dc.date.issued2009-03-15en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3075873en_US
dc.identifier.urihttp://hdl.handle.net/11536/7485-
dc.description.abstractWe reported on organic thin-film transistors (OTFTs) with high dielectric constant polymer, poly(2,2,2-trifluoroethyl methacrylate) (PTFMA), as the gate dielectric. In top-contact OTFTs, the field-effect mobility was enhanced by applying a dielectric buffer layer poly(alpha-methylstyrene) to the bare PTFMA. After improving interfacial affinity within the active layer/dielectrics, deposited pentacene grain size and device performance were enhanced dramatically. The corresponding mobility, threshold voltage, and on/off current ratio were 0.70 cm(2) V(-1) s(-1), -10.5 V, and 5.4x10(5), respectively. The moderately improved interface also suppressed the hole-trapping effect, which led to less hysteresis and minimized threshold voltage shift.en_US
dc.language.isoen_USen_US
dc.subjectbuffer layersen_US
dc.subjectgrain sizeen_US
dc.subjecthigh-k dielectric thin filmsen_US
dc.subjecthole trapsen_US
dc.subjectorganic field effect transistorsen_US
dc.subjectorganic semiconductorsen_US
dc.subjectpolymer filmsen_US
dc.subjectthin film transistorsen_US
dc.titleEnhanced field-effect mobility in pentacene based organic thin-film transistors on polyacrylatesen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3075873en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume105en_US
dc.citation.issue6en_US
dc.citation.epageen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.identifier.wosnumberWOS:000264774000167-
dc.citation.woscount2-
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