完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Cheng, Jung-An | en_US |
dc.contributor.author | Chuang, Chiao-Shun | en_US |
dc.contributor.author | Chang, Ming-Nung | en_US |
dc.contributor.author | Tsai, Yun-Chu | en_US |
dc.contributor.author | Shieh, Han-Ping D. | en_US |
dc.date.accessioned | 2014-12-08T15:09:46Z | - |
dc.date.available | 2014-12-08T15:09:46Z | - |
dc.date.issued | 2009-03-15 | en_US |
dc.identifier.issn | 0021-8979 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.3075873 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/7485 | - |
dc.description.abstract | We reported on organic thin-film transistors (OTFTs) with high dielectric constant polymer, poly(2,2,2-trifluoroethyl methacrylate) (PTFMA), as the gate dielectric. In top-contact OTFTs, the field-effect mobility was enhanced by applying a dielectric buffer layer poly(alpha-methylstyrene) to the bare PTFMA. After improving interfacial affinity within the active layer/dielectrics, deposited pentacene grain size and device performance were enhanced dramatically. The corresponding mobility, threshold voltage, and on/off current ratio were 0.70 cm(2) V(-1) s(-1), -10.5 V, and 5.4x10(5), respectively. The moderately improved interface also suppressed the hole-trapping effect, which led to less hysteresis and minimized threshold voltage shift. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | buffer layers | en_US |
dc.subject | grain size | en_US |
dc.subject | high-k dielectric thin films | en_US |
dc.subject | hole traps | en_US |
dc.subject | organic field effect transistors | en_US |
dc.subject | organic semiconductors | en_US |
dc.subject | polymer films | en_US |
dc.subject | thin film transistors | en_US |
dc.title | Enhanced field-effect mobility in pentacene based organic thin-film transistors on polyacrylates | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.3075873 | en_US |
dc.identifier.journal | JOURNAL OF APPLIED PHYSICS | en_US |
dc.citation.volume | 105 | en_US |
dc.citation.issue | 6 | en_US |
dc.citation.epage | en_US | |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | 顯示科技研究所 | zh_TW |
dc.contributor.department | Department of Photonics | en_US |
dc.contributor.department | Institute of Display | en_US |
dc.identifier.wosnumber | WOS:000264774000167 | - |
dc.citation.woscount | 2 | - |
顯示於類別: | 期刊論文 |