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dc.contributor.authorChen, Ching-Yuen_US
dc.contributor.authorLee, Lingen_US
dc.contributor.authorTai, Shin-Kaien_US
dc.contributor.authorFu, Shao-Fuen_US
dc.contributor.authorKe, Wen-Chengen_US
dc.contributor.authorChou, Wu-Chingen_US
dc.contributor.authorChang, Wen-Haoen_US
dc.contributor.authorLee, Ming-Chihen_US
dc.contributor.authorChen, Wei-Kuoen_US
dc.date.accessioned2014-12-08T15:09:49Z-
dc.date.available2014-12-08T15:09:49Z-
dc.date.issued2009-03-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.48.031001en_US
dc.identifier.urihttp://hdl.handle.net/11536/7527-
dc.description.abstractPhotoluminescence (PL) measurements were employed to investigate the emission properties of uncapped InN nanodot samples grown at temperature from 550 to 725 degrees C. Our results indicate that once the In droplets are formed, the optical properties of InN dots deteriorate markedly. As for those droplet-free samples grown at temperatures >= 600 degrees C, good luminescence properties are obtained. The corresponding 20 K PL peak energy is found to be almost constant at approximately 0.77 eV with a slow increase in its linewidth from 71 to 74 meV. A strong temperature-induced energy blue shift at approximately 20 to 280 K is considered to be partially connected to the band-filling effects of thermally stimulated surface electrons. (C) 2009 The Japan Society of Applied Physicsen_US
dc.language.isoen_USen_US
dc.titleOptical Properties of Uncapped InN Nanodots Grown at Various Temperaturesen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.48.031001en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume48en_US
dc.citation.issue3en_US
dc.citation.epageen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000267907300016-
dc.citation.woscount3-
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