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dc.contributor.authorZan, Hsiao-Wenen_US
dc.contributor.authorChou, Cheng-Weien_US
dc.date.accessioned2014-12-08T15:09:50Z-
dc.date.available2014-12-08T15:09:50Z-
dc.date.issued2009-03-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.48.031501en_US
dc.identifier.urihttp://hdl.handle.net/11536/7529-
dc.description.abstractin this study, we discuss pentacene-based organic thin films grown on a self-assembled monolayer (SAM)-treated dielectric with various functional groups and molecular lengths. The functional groups and molecular lengths on the dielectric surface were modified using a SAM treatment followed by ultra violet (UV) light exposure. Surface energy was used to observe the surface polarity variation during UV light exposure. After pentacene deposition, the growth modes of pentacene on surfaces with various surface characteristics were analyzed by atomic force microscope (AFM) and X-ray diffraction (XRD). The structure of pentacene growth on different surfaces with various surface characteristics was carefully examined. Organic thin film transistors fabricated with pentacene grown on various surfaces were characterized. When the polar components of surface energy were decreased, device mobility was increased from 0.04 to 0.21 cm(2) V(-1) s(-1) and the threshold voltage shifted from -13.55 to -3.2 V. (C) 2009 The Japan Society of Applied Physicsen_US
dc.language.isoen_USen_US
dc.titleEffect of Surface Energy on Pentacene Thin-Film Growth and Organic Thin Film Transistor Characteristicsen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.48.031501en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume48en_US
dc.citation.issue3en_US
dc.citation.epageen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.identifier.wosnumberWOS:000267907300032-
dc.citation.woscount8-
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