飛秒雷射退火非真空製程銅銦鎵硒薄膜之定性分析研究

Abstract

我們利用飛秒脈衝雷射退火銅銦鎵硒非真空製程薄膜，並藉由調控雷射密度與時間來探討兩項參數對於薄膜退火的影響。利用X光繞射儀判斷薄膜的晶格品質及結構，發現退火後特徵軸向都有比較好的結晶情況，並且往高角度偏移；拉曼光譜探測薄膜是否有雜相的生成，以及A1 震盪行為的增強與往高頻偏移；能量散佈分析儀成份分析搭配拉曼光譜探討薄膜組成的變化，可以知道XRD的偏移與拉曼的偏移都與鎵的增加有關。在光學性質方面，利用低溫光激發螢光光譜量測薄膜施子能階與受子能階間的能量差，發現波長有紅移的現象，這個現象與退火後施子濃度的下降有關。最後利用光激發-探測的技術探討載子的生命時間長短，再用數學擬合方法討論薄膜的載子動力學。而在電性量測則是探討最後做成元件的電流-電壓曲線圖，計算出填充因素與轉換效率都有提高的現象，其中轉換效率提升2%。

We annealed flexible copper indium gallium selenide film manufactured in non- cacuum by femtosecond laser. We modulated laser irradiate time and laser fluence for investigating the effect by laser annealing. The XRD determines the quality and structure of the film. Peaks (112) and (220) have shorter full-width-half-maximum (FWHM) and shifts toward high angle.The Raman spectroscopy(RS) observes whether there are miscellaneous film phase formation. The A1 mode was got enhancement and shifted toward higher Raman shift. The film composition change has been studied by Energy-Dispersive-Spectroscopy (EDS) and RS. These shifts in XRD and RS are relatived to increasing of Ga. Further, the energy difference between donor-stat and acceptor-state has been investigated by Photoluminenscence (PL). We could find the wavelength of annealed film was longer when donor-state density decreasing after aeeealed. Finally, our team utilized pump-probe spectroscopy to study the carrier dynamics. The dynamical carrier behavior in thinfilms was analysis by mathematical fitting method. In the electrical properties, we measure the I-V curve of our devices, and calculate the fill factor (FF) and conversion efficiency (η) are getting higher number, increasing 10% and 2% respectively.