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dc.contributor.author陳喬弼en_US
dc.contributor.authorChen, Chau-Bien_US
dc.contributor.author簡紋濱en_US
dc.contributor.authorJian, Wen-Binen_US
dc.date.accessioned2014-12-12T02:43:29Z-
dc.date.available2014-12-12T02:43:29Z-
dc.date.issued2013en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#GT070152021en_US
dc.identifier.urihttp://hdl.handle.net/11536/75529-
dc.description.abstract本次實驗探討石墨烯元件和石墨烯/硫化鉛薄膜元件的光電流。利用撕膠帶法取得石墨烯和熱蒸鍍硫化鉛薄膜,製作石墨烯元件和石墨烯/硫化鉛薄膜元件。 由於石墨烯能隙為零,所以石墨烯的光電流並不大,溫度80 K時其值約36.2 nA,其增益比例為1.88 %。而石墨烯/硫化鉛薄膜照光會產生p型摻雜,代表硫化鉛受到光所產生之電子-電洞對,只有電洞傳輸至石墨烯上,因此光電流會受到閘極偏壓的改變而有所影響。在300 K時沒有光反應、在80 K時光反應非常強烈,代表傳輸至石墨烯上之電洞數目跟溫度成反比,當閘極偏壓為-35 V,增益比例為15.77 %、閘極偏壓為35 V,增益比例為-10.66 %。 硫化鉛的光電流大小與溫度成正比,而增益比例則與溫度成反比,由於石墨烯/硫化鉛薄膜沒有外加電場的幫助下,以至於電洞的傳輸不易,而在傳輸過程中電洞與電子再結合,使傳輸至石墨烯上的電洞數目下降,從光電流圖中可知道硫化鉛光電流的復合速率與溫度成正比,因此提出石墨烯/硫化鉛薄膜元件光電流傳輸機制的模型。zh_TW
dc.description.abstractIn this experiment, we probe into photocurrent of graphene devices and graphene/PbS thin film devices. Graphene flakes were made by mechanical exfoliation and PbS thin films were deposited by thermal evaporation. Due to its feature of a gapless semiconductor, graphene does not exhibit considerable photocurrent effects. The photocurrent of graphene flakes is about 36 nA and the enhancement ratio due to blue light excitation is 1.88 % at 80 K. In contrast, the PbS deposited graphene flakes may show higher photocurrent. It is argued that, after light illumination, the graphene is p-type doped. It implies that only holes transport to graphene after the generation of electron-hole pairs in PbS by light illumination. Therefore, the photocurrent is strongly dependent on the gating field. Though it does not show visible photoresponsivity at 300 K, the photoresponsivity increases largely at 80 K. When the gate biases are applied at -35 V and 35 V, the enhancement ratios raise up to 15.77 % and -10.66 %, respectively. The photocurrent of PbS is strongly dependent on temperature, and enhancement ratio is inversely proportional to the temperature. On the other hand, the graphene/Pbs heterostructures do not exhibit appreciable gating effects. It is argued that the holes and electrons will recombine and the holes transporting to graphene will be reduced much more. From the photocurrent measurements, we observed that the recombination rate of PbS is proportional to temperature and we proposed the photocurrent transmission mechanism of graphene/PbS heterostructure devices.en_US
dc.language.isozh_TWen_US
dc.subject石墨烯zh_TW
dc.subject硫化鉛zh_TW
dc.subject光電流zh_TW
dc.subjectgrapheneen_US
dc.subjectPbSen_US
dc.subjectphotocurrenten_US
dc.title探討石墨烯與其表面蒸鍍硫化鉛薄膜zh_TW
dc.titleProbing photoelectric characteristics of grapheneen_US
dc.typeThesisen_US
dc.contributor.department電子物理系所zh_TW
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