Changes of Electrical Characteristics for AlGaN/GaN HEMTs Under Uniaxial Tensile Strain

標題:	Changes of Electrical Characteristics for AlGaN/GaN HEMTs Under Uniaxial Tensile Strain
作者:	Chang, Chia-Ta Hsiao, Shih-Kuang Chang, Edward Yi Lu, Chung-Yu Huang, Jui-Chien Lee, Ching-Ting 材料科學與工程學系 Department of Materials Science and Engineering
關鍵字:	AlGaN/GaN;gate orientations;high-electron mobility transistors (HEMTs);transient current;uniaxial tensile strain
公開日期:	1-三月-2009
摘要:	This letter investigates the characteristics of unpassivated AlGaN/GaN high-electron mobility transistors (HEMTs) under uniaxial tensile strain. Mechanical stress can produce additional charges that change the HEMT channel current. is phenomenon is dependent upon gate orientation and may be the result of the piezoelectric effect and changes in electron mobility due to the applied uniaxial stress. In addition, results show that tensile strain reduces the transient current, which is, likely due to the additional donorlike surface states created through the piezoelectric effect.
URI:	http://dx.doi.org/10.1109/LED.2009.2012447 http://hdl.handle.net/11536/7552
ISSN:	0741-3106
DOI:	10.1109/LED.2009.2012447
期刊:	IEEE ELECTRON DEVICE LETTERS
Volume:	30
Issue:	3
起始頁:	213
結束頁:	215
顯示於類別：	期刊論文

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