碳化鈦奈米線之成長及其鑑定

Abstract

在本研究中，我們透過化學氣相沉積法於相對低溫(973 K)的環境下成功製備出碳化鈦奈米線。所製備的碳化鈦奈米線經過穿透式電子顯微鏡可以得知碳化鈦奈米線的直徑約為20-50 奈米且長度為數微米，經由電子選區繞射圖中獲得的是面心立方的單晶結構。本研究利用電化學循環伏安法及電化學阻抗分析法發現此碳化鈦奈米線電極具有良好的導電度。在場發特性上，具有低起始電場 (Eto: 6.7 V/μm)。這些特性使得碳化鈦奈米線在電化學元件或場發射材料的應用具有相當大的潛力。

In this research, we successfully synthesized titanium carbide (TiC) nanowires through a simple reaction by using CVD process at a relatively low temperature, 973 K. The obtained TiC nanowires have a single crystalline structure of face-centered cubic (FCC) while the diameters range from 20-50 nm and lengths are several of micrometers. Electrochemical properties were characterized via cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS) which show good conductivity. Field emission properties of TiC nanowires were investigated. The turn-on field Eto of the TiC nanowires were determined to be 6.7 V/m which suggests that TiC nanowires can be potentially applied in electrochemical devices or field emitters.