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dc.contributor.authorLin, Chun-Yuen_US
dc.contributor.authorKer, Ming-Douen_US
dc.date.accessioned2014-12-08T15:09:54Z-
dc.date.available2014-12-08T15:09:54Z-
dc.date.issued2007en_US
dc.identifier.isbn978-1-4244-0530-5en_US
dc.identifier.issn1529-2517en_US
dc.identifier.urihttp://hdl.handle.net/11536/7568-
dc.identifier.urihttp://dx.doi.org/10.1109/RFIC.2007.380991en_US
dc.description.abstractSilicon-controlled rectifier (SCR) has been used as an effective on-chip ESD protection device in CMOS technology due to the highest ESD robustness. In this work, the waffle layout structure for SCR can achieve smaller parasitic capacitance under the same ESD robustness. With smaller parasitic capacitance, the degradation on RF circuit performance due to ESD protection device can be reduced. The proposed waffle SCR with low parasitic capacitance is suitable for on-chip ESD protection in RFICs.en_US
dc.language.isoen_USen_US
dc.subjectelectrostatic discharges (ESD)en_US
dc.subjectradio-frequency integrated circuit (RF IC)en_US
dc.subjectsilicon-controlled rectifier (SCR)en_US
dc.titleLow-capacitance SCR with waffle layout structure for on-chip ESD protection in RF ICsen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1109/RFIC.2007.380991en_US
dc.identifier.journal2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, Digest of Papersen_US
dc.citation.spage749en_US
dc.citation.epage752en_US
dc.contributor.department電機學院zh_TW
dc.contributor.departmentCollege of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000248148800171-
Appears in Collections:Conferences Paper


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