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dc.contributor.authorTseng, WTen_US
dc.contributor.authorWang, YLen_US
dc.date.accessioned2014-12-08T15:02:02Z-
dc.date.available2014-12-08T15:02:02Z-
dc.date.issued1997-02-01en_US
dc.identifier.issn0013-4651en_US
dc.identifier.urihttp://dx.doi.org/10.1149/1.1837417en_US
dc.identifier.urihttp://hdl.handle.net/11536/757-
dc.description.abstractA new removal rate model which is a modification to the Preston equation is developed to re-account the dependence of removal rate on the down force (pressure) and rotation speed during the chemical-mechanical polishing (CMP) process. The removal rate is first expressed as a linear function of both normal and shear stresses. The analogy of the CMP removal process to traveling indenters is considered and the stresses acting upon the abrasive particles (indenters) are formulated using previous models based on principles of elasticity and fluid mechanics. An expression is then derived which predicts the (pressure)(56) and (speed)(1/2) dependences of the removal rate. Experimental results with thermal oxides are consistent with the predictions.en_US
dc.language.isoen_USen_US
dc.titleRe-examination of pressure and speed dependences of removal rate during chemical-mechanical polishing processesen_US
dc.typeLetteren_US
dc.identifier.doi10.1149/1.1837417en_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.citation.volume144en_US
dc.citation.issue2en_US
dc.citation.spageL15en_US
dc.citation.epageL17en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1997WL64700001-
dc.citation.woscount83-
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