鎳-銻化銦合金與氧化鋁/銻化銦金氧半電容之特性分析

Abstract

為了提高三五族金氧半電晶體的特性表現，其中一個需要克服的挑戰就是形成低電阻的源極/汲極接面。目前金屬和三五族化合物半導體的合金已被廣泛地使用在自我對準形成源極/汲極的製程當中。在本論文中，我們對於鎳-銻化銦合金的形成以及與三五族化合物半導體的接觸特性進行研究，藉由快速熱退火使鎳直接與銻化銦反應形成金屬合金。研究上顯示鎳跟銻化銦形成的合金有較低的接觸電阻、對於電洞有較低的蕭特基能障高度。最後我們使用溼式化學溶液製程加上氫電漿與TMA的預先處理方式，對於改善Al2O3/GaSb的介面品質是有效果的。

One of the main challenges with high-performance III–V MOSFETs is the low-resistance source and drain (S/D) formation. Metal alloy with III–V compound semiconductors, which enables self-aligned metal S/D formation process, has been demonstrated recently. In this work, we study the formation and electrical properties of Ni-GaSb alloys by direct reaction of Ni with GaSb. It is found that several properties of Ni-antimonide alloys, including low thermal budget processing, low Schottky barrier height for holes. Finally, we make MOSCAPs with the combination of wet chemical surface cleaning with TMA pretreatment and hydrogen plasma exposure gives better Al2O3/GaSb interfacial quality than pure wet chemical cleaning.