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dc.contributor.authorGao, Zhi Qiangen_US
dc.contributor.authorLuo, Meimingen_US
dc.contributor.authorSun, Xiao Huaen_US
dc.contributor.authorTam, Hoi Lamen_US
dc.contributor.authorWong, Man Shingen_US
dc.contributor.authorMi, Bao Xiuen_US
dc.contributor.authorXia, Ping Fangen_US
dc.contributor.authorCheah, Kok Waien_US
dc.contributor.authorChen, Chin Hsinen_US
dc.date.accessioned2014-12-08T15:10:01Z-
dc.date.available2014-12-08T15:10:01Z-
dc.date.issued2009-02-09en_US
dc.identifier.issn0935-9648en_US
dc.identifier.urihttp://dx.doi.org/10.1002/adma.200702877en_US
dc.identifier.urihttp://hdl.handle.net/11536/7642-
dc.description.abstractA new host material for use in phosphorescent OLEDs with desirable electronic properties has been synthesized. The material exhibits superior carrier-transport properties, a narrow optical band gap, relatively high triplet energy, and high thermal stability. It is synthesized by integrating hole-transporting carbazole groups into an electron-transporting phenanthroline core (see figure), and is demonstrated to be an excellent host for phosphorescent dopant emitters.en_US
dc.language.isoen_USen_US
dc.titleNew Host Containing Bipolar Carrier Transport Moiety for High-Efficiency Electrophosphorescence at Low Voltagesen_US
dc.typeArticleen_US
dc.identifier.doi10.1002/adma.200702877en_US
dc.identifier.journalADVANCED MATERIALSen_US
dc.citation.volume21en_US
dc.citation.issue6en_US
dc.citation.spage688en_US
dc.citation.epage+en_US
dc.contributor.department友訊交大聯合研發中心zh_TW
dc.contributor.departmentD Link NCTU Joint Res Ctren_US
dc.identifier.wosnumberWOS:000263492000011-
dc.citation.woscount90-
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