標題: | Size-dependent strain relaxation in InN islands grown on GaN by metalorganic chemical vapor deposition |
作者: | Tsai, Wen-Che Lin, Feng-Yi Ke, Wen-Cheng Lu, Shu-Kai Cheng, Shun-Jen Chou, Wu-Ching Chen, Wei-Kuo Lee, Ming-Chih Chang, Wen-Hao 電子物理學系 Department of Electrophysics |
關鍵字: | finite element analysis;gallium compounds;III-V semiconductors;indium compounds;internal stresses;island structure;MOCVD;Raman spectra;wide band gap semiconductors |
公開日期: | 9-二月-2009 |
摘要: | We report Raman measurements on InN islands grown on GaN by metalorganic chemical vapor deposition. The Raman frequency of the InN E(2) mode is found to decrease exponentially with the island's aspect ratio, indicating a size dependent strain relaxation during the island formation. Our results suggest that most of the strain at the InN-GaN interface have been released plastically during the initial stage of island formations. After that, the residual strain of only -3.5x10(-3) is further relaxed elastically via surface islanding. The experimental data are in agreement with the strain relaxation predicted from a simplified model analysis as well as three-dimensional finite-element simulations. |
URI: | http://dx.doi.org/10.1063/1.3064166 http://hdl.handle.net/11536/7643 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.3064166 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 94 |
Issue: | 6 |
結束頁: | |
顯示於類別: | 期刊論文 |