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dc.contributor.authorChen, Ke-Shianen_US
dc.contributor.authorChang, Edward Yien_US
dc.contributor.authorLin, Chia-Chingen_US
dc.contributor.authorLee, Cheng-Shihen_US
dc.date.accessioned2014-12-08T15:10:02Z-
dc.date.available2014-12-08T15:10:02Z-
dc.date.issued2009-02-01en_US
dc.identifier.issn0038-1101en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.sse.2008.10.017en_US
dc.identifier.urihttp://hdl.handle.net/11536/7666-
dc.description.abstractUse of the Pd/Ge/Cu multilayers as the emitter and collector ohmic metal for the fully Cu-metallized InGaP/GaAs heterojunction bipolar transistors is studied. The Pd/Ge/Cu ohmic contact exhibited a very low contact resistance of 5.73 x 10(-7) Omega cm(2) at a low annealing temperature (250 degrees C) and the microstructure evolution of Pd/Ge/Cu ohmic contact was investigated using transmission electron microscopy and energy dispersive spectrometer. We also did some comparisons between the Pd/Ge/Cu, Pd/Ge/Ti/Pt/Cu, and the traditional Au/Ge/Ni/Au ohmic contact structures to n-type GaAs. The common emitter I-V curves and Gummel plot of these Cu-metallized HBTs using Pd/Ge/Cu ohmic contact and Cu interconnects showed similar electrical characteristics as those HBTs with conventional Au-metallization. The cutoff frequency (f(T)) of 3 x 20-mu m-emitter-area devices was about 38 GHz. During both the current-accelerated stress test (110 kA/cm(2) stress for 24 h) and the thermal stability test (annealing at 250 degrees C for 24 h), the fully Cu-metallized HBT with Pd/Ge/Cu ohmic contact and Cu interconnects showed almost no obvious degradation in electrical characteristics. The results show that the Pd/Ge/Cu ohmic contact in combination with the Cu interconnects can be used on HBT devices to achieve the Au-free fully Cu-metallized lnGaP/GaAs HBTs, and the devices exhibit good device performance. (C) 2008 Elsevier Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectCopperen_US
dc.subjectGaAsen_US
dc.subjectHBTen_US
dc.subjectMetallizationen_US
dc.subjectOhmic contacten_US
dc.titleApplication of Pd/Ge/Cu alloyed ohmic contact system to n-type GaAs for fully Cu-metallized InGaP/GaAs HBTsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.sse.2008.10.017en_US
dc.identifier.journalSOLID-STATE ELECTRONICSen_US
dc.citation.volume53en_US
dc.citation.issue2en_US
dc.citation.spage154en_US
dc.citation.epage159en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000263596100009-
dc.citation.woscount1-
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