標題: | 利用雷射剝離技術製作光激發氮化鎵族垂直共振腔面射型雷射之特性研究 Characteristics of optically pumped GaN-based vertical cavity surface emitting lasers fabricated by a laser lift-off technique |
作者: | 梁文燈 Wen-Deng Liang 郭浩中 Hao-chung Kuo 光電工程學系 |
關鍵字: | 面射型雷射;雷射剝離技術;氮化鎵;VCSEL;laser lift-off;GaN |
公開日期: | 2004 |
摘要: | 在本篇論文中,主要是探討光激發氮化鎵族垂直共振腔面射型雷射的製作與特性量測。我們利用雷射剝離技術製作的氮化鎵族面射型雷射,上下層的布拉格反射鏡分別為氧化鈦/二氧化矽布拉格反射鏡(6 pairs SiO2/TiO2 DBRs)和氧化鉭/二氧化矽布拉格反射鏡(8 pairs SiO2/Ta2O5 DBRs),中間發光層為氮化銦鎵/氮化鎵多重量子井(In0.1Ga0.9N/GaN MQW)。我們所製作出的氮化鎵族面射型雷射操作在室溫下的臨界激發功率為270奈米焦耳(21.5毫焦耳/平方公分),發光波長在414奈米,半高寬為0.25奈米,發散角度約10□,極化程度為70%,特徵溫度為278K。 We mainly investigated fabrication and optical characteristics of the optically pumped GaN-based vertical cavity surface emitting lasers. In this thesis, the lasing action was obtained from a GaN-based VCSEL. The VCSEL has an In0.1Ga0.9N/GaN multiple quantum wells and two dielectric DBRs of SiO2/TiO2 and SiO2/Ta2O5 fabricated by a laser lift-off process. The laser emits blue-violet wavelength at 414 nm under optical pumping at room temperature with threshold energy of 270 nJ. The laser emission has a narrow linewidth of 0.25 nm. The characteristic temperature and the degree of polarization of our GaN-based VCSELs are about 278K and 70%, respectively. The divergence angle was estimated to be about 10° using the beam size in far-field emission images and focus distance of the objective. |
URI: | http://140.113.39.130/cdrfb3/record/nctu/#GT009224509 http://hdl.handle.net/11536/76700 |
顯示於類別: | 畢業論文 |