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dc.contributor.authorChang, Chih-Pangen_US
dc.contributor.authorWu, YewChung Sermonen_US
dc.date.accessioned2014-12-08T15:10:03Z-
dc.date.available2014-12-08T15:10:03Z-
dc.date.issued2009-02-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2008.2010064en_US
dc.identifier.urihttp://hdl.handle.net/11536/7677-
dc.description.abstractIn this letter, a new manufacturing method for metal-induced lateral crystallization (MILC) polycrystalline silicon thin-film transistors (poly-Si TFTs) using CF(4) plasma was proposed. It was found that CF(4) plasma effectively minimizes the trap-state density by etching away the top surface of MILC and passivating the trap states, leading to superior electrical characteristics such as high field-effect mobility, low threshold voltage, low subthreshold slope, low leakage current, and high ON-/OFF-current ratio. CF(4)-Plasma MILC TFTs also possess high immunity against the hot-carrier stress and thereby exhibit better reliability than that of conventional MILC TFTs. Moreover, the manufacturing processes are simple (without any additional thermal annealing step) and compatible with MILC TFT processes.en_US
dc.language.isoen_USen_US
dc.titleImproved Electrical Performance of MILC Poly-Si TFTs Using CF(4) Plasma by Etching Surface of Channelen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2008.2010064en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume30en_US
dc.citation.issue2en_US
dc.citation.spage130en_US
dc.citation.epage132en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
Appears in Collections:Articles