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dc.contributor.authorHuang, Jen-Hsienen_US
dc.contributor.authorYang, Chuan-Yien_US
dc.contributor.authorHo, Zhong-Yoen_US
dc.contributor.authorKekuda, Dhananjayen_US
dc.contributor.authorWu, Meng-Chyien_US
dc.contributor.authorChien, Fan-Chingen_US
dc.contributor.authorChen, Peilinen_US
dc.contributor.authorChu, Chih-Weien_US
dc.contributor.authorHo, Kuo-Chuanen_US
dc.date.accessioned2014-12-08T15:10:06Z-
dc.date.available2014-12-08T15:10:06Z-
dc.date.issued2009-02-01en_US
dc.identifier.issn1566-1199en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.orgel.2008.09.007en_US
dc.identifier.urihttp://hdl.handle.net/11536/7710-
dc.description.abstractControl of blend morphology at the nanoscale and high charge mobility is essential for polymer photovoltaic devices in terms of their power conversion efficiencies (PCE). In the case of bulk heterojunctions solar cells, both blend morphology and charge mobility are influenced by thermal treatment. In this manuscript, we study the effects of annealing temperature on polymer PV devices with blends of poly[9,9'-dioctyl-fluorene-co-bithiophene] (F8T2) and [6,6]-phenyl-C(61)-butyric acid methyl ester (PCBM). The morphological changes of blended films were observed upon thermal annealing temperature near and above glass transition temperature (130 degrees C). Such microstructural transformations resulted in modified charge transport pathways and therefore greately influenced the device performance. The highest PCE of 2.14% with an open-circuit voltage (V(OC)) of 0.99 V and a short-circuit current (J(SC)) of 4.24 mA/cm(2) was achieved by device annealing at 70 degrees C for 20 min. (C) 2008 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectPhotovoltaic deviceen_US
dc.subjectPolymeren_US
dc.subjectF8T2en_US
dc.subjectAnnealing effecten_US
dc.titleAnnealing effect of polymer bulk heterojunction solar cells based on polyfluorene and fullerene blenden_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.orgel.2008.09.007en_US
dc.identifier.journalORGANIC ELECTRONICSen_US
dc.citation.volume10en_US
dc.citation.issue1en_US
dc.citation.spage27en_US
dc.citation.epage33en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000262889400005-
dc.citation.woscount56-
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