完整後設資料紀錄
DC 欄位語言
dc.contributor.authorChen, Fang-Chungen_US
dc.contributor.authorChien, Shang-Chiehen_US
dc.contributor.authorChen, Yung-Shiuanen_US
dc.date.accessioned2014-12-08T15:10:06Z-
dc.date.available2014-12-08T15:10:06Z-
dc.date.issued2009-01-26en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3075066en_US
dc.identifier.urihttp://hdl.handle.net/11536/7724-
dc.description.abstractThis paper describes the effects of charge trapping on the device performances of triplet polymer light-emitting diodes (PLEDs) after the cathode contact had been improved through the blending of poly(ethylene glycol) (PEG) into the active layer. The external quantum efficiency (EQE) was enhanced when the dopant tended to trap electrons. In contrast, we observed no EQE enhancement for the device featuring a hole-trapping dopant. Because PEG promoted electron injection, more electrons were trapped in the triplet molecules, thereby enhancing the probability of recombination. Finally, after incorporating PEG, we further achieved white PLEDs exhibiting both high EQE and high power efficiency.en_US
dc.language.isoen_USen_US
dc.subjectconducting polymersen_US
dc.subjectelectron trapsen_US
dc.subjecthole trapsen_US
dc.subjectorganic light emitting diodesen_US
dc.subjectorganic semiconductorsen_US
dc.subjectphosphorescenceen_US
dc.titleSingle-layer triplet white polymer light-emitting diodes incorporating polymer oxides: Effect of charge trapping at phosphorescent dopantsen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3075066en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume94en_US
dc.citation.issue4en_US
dc.citation.epageen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.identifier.wosnumberWOS:000262971800106-
dc.citation.woscount22-
顯示於類別:期刊論文


文件中的檔案:

  1. 000262971800106.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。