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dc.contributor.authorAhn, H.en_US
dc.contributor.authorChuang, C. -H.en_US
dc.contributor.authorKu, Y. -P.en_US
dc.contributor.authorPan, C. -L.en_US
dc.date.accessioned2014-12-08T15:10:08Z-
dc.date.available2014-12-08T15:10:08Z-
dc.date.issued2009-01-15en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3068172en_US
dc.identifier.urihttp://hdl.handle.net/11536/7744-
dc.description.abstractUltrafast time-resolved terahertz spectroscopy is employed to investigate the carrier dynamics of indium nitride (InN) nanorod arrays and an epitaxial film. Transient differential transmission of terahertz wave shows that hot carrier cooling and defect-related nonradiative recombination are the common carrier relaxation processes for InN film and nanorods. However, the electrons confined in the narrow structure of nanorods are significantly affected by the carrier diffusion process near the surface, which causes the abnormally long relaxation time for nanorods.en_US
dc.language.isoen_USen_US
dc.subjectcarrier lifetimeen_US
dc.subjectcarrier relaxation timeen_US
dc.subjecthot carriersen_US
dc.subjectIII-V semiconductorsen_US
dc.subjectindium compoundsen_US
dc.subjectnanostructured materialsen_US
dc.subjectnarrow band gap semiconductorsen_US
dc.subjectsemiconductor epitaxial layersen_US
dc.subjecttime resolved spectraen_US
dc.subjectterahertz wave spectraen_US
dc.titleFree carrier dynamics of InN nanorods investigated by time-resolved terahertz spectroscopyen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3068172en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume105en_US
dc.citation.issue2en_US
dc.citation.epageen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000262970900053-
dc.citation.woscount8-
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