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dc.contributor.authorLin, T. H.en_US
dc.contributor.authorShih, H. C.en_US
dc.contributor.authorHsieh, C. C.en_US
dc.contributor.authorLuo, C. W.en_US
dc.contributor.authorLin, J-Yen_US
dc.contributor.authorHer, J. L.en_US
dc.contributor.authorYang, H. D.en_US
dc.contributor.authorHsu, C-Hen_US
dc.contributor.authorWu, K. H.en_US
dc.contributor.authorUen, T. M.en_US
dc.contributor.authorJuang, J. Y.en_US
dc.date.accessioned2014-12-08T15:10:08Z-
dc.date.available2014-12-08T15:10:08Z-
dc.date.issued2009-01-14en_US
dc.identifier.issn0953-8984en_US
dc.identifier.urihttp://dx.doi.org/10.1088/0953-8984/21/2/026013en_US
dc.identifier.urihttp://hdl.handle.net/11536/7747-
dc.description.abstractWe investigated the magnetic and ferroelectric properties of c-axis oriented orthorhombic phase HoMnO(3) (o-HMO in Pbnm symmetry setting) thin films grown on Nb-doped SrTiO(3)(001) substrates. The o-HMO films exhibit an antiferromagnetic ordering near 42 K, irrespective of the orientation of the applied field. However, an additional magnetic ordering occurring around 35 K was observed when the field was applied along the c-axis of o-HMO, which was absent when the field was applied in the ab-plane. The magnetocapacitance measured along the c-axis showed that although there is evidence of dielectric constant enhancement when the temperature is below 35 K the expected abrupt change in dielectric constant appears at a much lower temperature and reaches maximum around 13.5 K, indicating that the low-temperature c-axis polarization might be related to the ordering of the Ho(3+) moment. The lattice constant analyses using x-ray diffraction and the observation of a slight magnetization hysteresis suggest that the weak second magnetic transition along the c- axis at 35 K might be more relevant to the strain-induced effect on antiferromagnetism.en_US
dc.language.isoen_USen_US
dc.titleStrain-induced effects on antiferromagnetic ordering and magnetocapacitance in orthorhombic HoMnO(3) thin filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1088/0953-8984/21/2/026013en_US
dc.identifier.journalJOURNAL OF PHYSICS-CONDENSED MATTERen_US
dc.citation.volume21en_US
dc.citation.issue2en_US
dc.citation.spageen_US
dc.citation.epageen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of Physicsen_US
Appears in Collections:Articles