完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Ho, Meng-Huan | en_US |
dc.contributor.author | Hsieh, Ming-Ta | en_US |
dc.contributor.author | Lin, Kuan-Heng | en_US |
dc.contributor.author | Chen, Teng-Ming | en_US |
dc.contributor.author | Chen, Jenn-Fang | en_US |
dc.contributor.author | Chen, Chin H. | en_US |
dc.date.accessioned | 2014-12-08T15:10:08Z | - |
dc.date.available | 2014-12-08T15:10:08Z | - |
dc.date.issued | 2009-01-12 | en_US |
dc.identifier.issn | 0003-6951 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.3072616 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/7750 | - |
dc.description.abstract | An organic light-emitting device with enhanced efficiency sby employing 2-methyl-9,10-di(2-naphthyl)anthracene (MADN) as hole-transport material (HTM) has been developed. The admittance spectroscopy studies indicate that using MADN as HTM can reduce the amount of hole carriers injected into the device leading to a well-balanced carrier recombination. The green fluorescent 10-(2-benzothiazolyl)-1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H,11H-benzo[l]pyrano-[6,7,8-ij]quinolizin-11-one doped tris(8-quinolinolato)aluminum device achieved a current efficiency of 21.8 cd/A and a power efficiency of 10.4 lm/W at 20 mA/cm(2) that are 65% higher than those of the control device. The green-doped device also achieved a long half-decay lifetime of 22 000 h at an initial brightness of 500 cd/m(2). | en_US |
dc.language.iso | en_US | en_US |
dc.subject | charge injection | en_US |
dc.subject | doping | en_US |
dc.subject | electric admittance | en_US |
dc.subject | fluorescence | en_US |
dc.subject | hole mobility | en_US |
dc.subject | organic light emitting diodes | en_US |
dc.title | Study of efficient and stable organic light-emitting diodes with 2-methyl-9,10-di(2-naphthyl)anthracene as hole-transport material by admittance spectroscopy | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.3072616 | en_US |
dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
dc.citation.volume | 94 | en_US |
dc.citation.issue | 2 | en_US |
dc.citation.epage | en_US | |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | 應用化學系 | zh_TW |
dc.contributor.department | 友訊交大聯合研發中心 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.contributor.department | Department of Applied Chemistry | en_US |
dc.contributor.department | D Link NCTU Joint Res Ctr | en_US |
dc.identifier.wosnumber | WOS:000262534900078 | - |
dc.citation.woscount | 15 | - |
顯示於類別: | 期刊論文 |