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dc.contributor.author許富傑en_US
dc.contributor.authorFu-Chieh Hsuen_US
dc.contributor.author郭仁財en_US
dc.contributor.authorJen-Tsai Kuoen_US
dc.date.accessioned2014-12-12T02:53:11Z-
dc.date.available2014-12-12T02:53:11Z-
dc.date.issued2005en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#GT009313584en_US
dc.identifier.urihttp://hdl.handle.net/11536/78398-
dc.description.abstract本論文利用步階阻抗共振腔以垂直堆疊的方式,設計具有雙通帶的高階帶通濾波器。藉由改變步階阻抗共振腔的幾何參數,調整其諧振頻率,以得到兩個通帶的中心頻率,再經由相鄰共振腔之間耦合量與長度及間距關係的設計圖,選定兩個通帶可實現的比例頻寬完成設計。為達高階設計,且使每一對相鄰共振腔均有適當的耦合量,必須靈活調整共振腔之幾何參數,以達到設計高階電路的目的。最後,實作電路的量測結果與電磁模擬結果比較,兩者相當一致。zh_TW
dc.description.abstractA rigorous synthesis method is presented for higher order microstrip bandpass filters with a dual-passband response in vertical stack configuration. The building block of the circuit is stepped-impedance resonator (SIR) of which resonant frequencies can be tuned by simply adjusting its structure parameters. Fractional bandwidth design graphs are established for determining offset and space between adjacent resonators. The impedance and length ratios of the SIR should be properly chosen so that all couplings between any two adjacent resonators can fulfill the design figures given by the element values of the lowpass prototype. Second-, sixth- and eighth-order bandpass filters are designed and fabricated. Measured results of the three fabricated circuits show good agreement with the simulated responses.en_US
dc.language.isozh_TWen_US
dc.subject帶通濾波器zh_TW
dc.subject雙通帶zh_TW
dc.subject微帶線zh_TW
dc.subject頻寬設計圖zh_TW
dc.subject高階zh_TW
dc.subject垂直堆疊zh_TW
dc.subjectBandpass fitleren_US
dc.subjectdual-pass banden_US
dc.subjectmicrostripen_US
dc.subjectdesign graphen_US
dc.subjecthigh orderen_US
dc.subjectvertically stackeden_US
dc.title垂直堆疊式高階雙通帶帶通濾波器設計zh_TW
dc.titleVertically Stacked High Order Stepped-Impedance Resonator (SIR) Bandpass Filters with a Dual-Passband Responseen_US
dc.typeThesisen_US
dc.contributor.department電信工程研究所zh_TW
顯示於類別:畢業論文