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dc.contributor.authorLi, Yimingen_US
dc.contributor.authorHwang, Chih-Hongen_US
dc.contributor.authorYu, Shao-Mingen_US
dc.contributor.authorHuang, Hsuan-Mingen_US
dc.date.accessioned2014-12-08T15:10:16Z-
dc.date.available2014-12-08T15:10:16Z-
dc.date.issued2007en_US
dc.identifier.isbn978-0-7354-0432-8en_US
dc.identifier.issn0094-243Xen_US
dc.identifier.urihttp://hdl.handle.net/11536/7846-
dc.description.abstractNanoscale multiple-gate fin-typed field effect transistors (FinFETs) are promising candidates for next generation semiconductor devices. Impact of the discrete-dopant number and discrete-dopant position on device characteristics is crucial for nanoscale semiconductor devices. In this paper, we study the discrete-dopant-induced potential and threshold voltage fluctuations in 16nm triple-gate FinFET devices. Discrete dopants are statistically positioned into the three dimensional channel region to examine associated carrier transportation characteristics, concurrently capturing "dopant concentration variation" and "dopant position fluctuation". It is found that the inhomogeneity of the potential induced by the discreteness of the channel dopants significantly disturbs device threshold voltage, and thus the device characteristics. This study provides an insight into the source of fluctuation and fluctuations induced by discrete dopants in ultra-small field effect transistors with vertical channel structures.en_US
dc.language.isoen_USen_US
dc.subjectfluctuationen_US
dc.subjectFinFETen_US
dc.subjectdiscrete dopanten_US
dc.subjectnanoscale transistoren_US
dc.subjectlarge-scale Modelingen_US
dc.subjectand simulationen_US
dc.subjectstatistical analysisen_US
dc.subject3D "atomistic" techniqueen_US
dc.titleThree-dimensional simulation of random-dopant-induced threshold voltage fluctuation in nanoscale Fin-typed field effect transistorsen_US
dc.typeProceedings Paperen_US
dc.identifier.journalNoise and Fluctuationsen_US
dc.citation.volume922en_US
dc.citation.spage387en_US
dc.citation.epage390en_US
dc.contributor.department資訊工程學系zh_TW
dc.contributor.departmentDepartment of Computer Scienceen_US
dc.identifier.wosnumberWOS:000249049500080-
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