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dc.contributor.authorLing, Hong-Shien_US
dc.contributor.authorWang, Shiang-Yuen_US
dc.contributor.authorLee, Chien-Pingen_US
dc.contributor.authorLo, Ming-Chengen_US
dc.date.accessioned2014-12-08T15:10:16Z-
dc.date.available2014-12-08T15:10:16Z-
dc.date.issued2009-01-01en_US
dc.identifier.issn1041-1135en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LPT.2008.2009130en_US
dc.identifier.urihttp://hdl.handle.net/11536/7849-
dc.description.abstractWe demonstrate the high-temperature operation of confinement enhanced dots-in-a-well (CE-DWELL) quantum-dot infrared photodetectors (QDIPs). The thin Al(0.3)Ga(0.7)As barrier layer added above the InAs QDs greatly improve the lateral confinement of QD states in the In(0.15)Ga(0.85)M DWELL structure and the device performance. With better device parameters of CE-DWELL, it is possible to achieve high quantum efficiency, high operating temperature, and long-wavelength detection at the same time.en_US
dc.language.isoen_USen_US
dc.subjectInfrared detectorsen_US
dc.subjectphotodetectorsen_US
dc.subjectquantum dots (QDs)en_US
dc.subjectquantum effect semiconductor devicesen_US
dc.titleLong-Wavelength Quantum-Dot Infrared Photodetectors With Operating Temperature Over 200 Ken_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LPT.2008.2009130en_US
dc.identifier.journalIEEE PHOTONICS TECHNOLOGY LETTERSen_US
dc.citation.volume21en_US
dc.citation.issue1-4en_US
dc.citation.spage118en_US
dc.citation.epage120en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000263480100038-
dc.citation.woscount4-
Appears in Collections:Articles


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