Long-Wavelength Quantum-Dot Infrared Photodetectors With Operating Temperature Over 200 K

doi:10.1109/LPT.2008.2009130

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Ling, Hong-Shi	en_US
dc.contributor.author	Wang, Shiang-Yu	en_US
dc.contributor.author	Lee, Chien-Ping	en_US
dc.contributor.author	Lo, Ming-Cheng	en_US
dc.date.accessioned	2014-12-08T15:10:16Z	-
dc.date.available	2014-12-08T15:10:16Z	-
dc.date.issued	2009-01-01	en_US
dc.identifier.issn	1041-1135	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/LPT.2008.2009130	en_US
dc.identifier.uri	http://hdl.handle.net/11536/7849	-
dc.description.abstract	We demonstrate the high-temperature operation of confinement enhanced dots-in-a-well (CE-DWELL) quantum-dot infrared photodetectors (QDIPs). The thin Al(0.3)Ga(0.7)As barrier layer added above the InAs QDs greatly improve the lateral confinement of QD states in the In(0.15)Ga(0.85)M DWELL structure and the device performance. With better device parameters of CE-DWELL, it is possible to achieve high quantum efficiency, high operating temperature, and long-wavelength detection at the same time.	en_US
dc.language.iso	en_US	en_US
dc.subject	Infrared detectors	en_US
dc.subject	photodetectors	en_US
dc.subject	quantum dots (QDs)	en_US
dc.subject	quantum effect semiconductor devices	en_US
dc.title	Long-Wavelength Quantum-Dot Infrared Photodetectors With Operating Temperature Over 200 K	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/LPT.2008.2009130	en_US
dc.identifier.journal	IEEE PHOTONICS TECHNOLOGY LETTERS	en_US
dc.citation.volume	21	en_US
dc.citation.issue	1-4	en_US
dc.citation.spage	118	en_US
dc.citation.epage	120	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000263480100038	-
dc.citation.woscount	4	-
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