标题: Efficiency Enhancement and Beam Shaping of GaN-InGaN Vertical-Injection Light-Emitting Diodes via High-Aspect-Ratio Nanorod Arrays
作者: Tsai, Min-An
Yu, Peichen
Chao, C. L.
Chiu, C. H.
Kuo, H. C.
Lin, S. H.
Huang, J. J.
Lu, T. C.
Wang, S. C.
电子物理学系
光电工程学系
Department of Electrophysics
Department of Photonics
关键字: Beam shaping;GaN;high-aspect-ratio nanorod arrays;vertical-injection light-emitting diodes (VI-LEDs)
公开日期: 1-一月-2009
摘要: The enhanced light extraction and collimated output beam profile from GaN-InGaN vertical-injection light-emitting diodes (VI-LEDs.) are demonstrated utilizing high-aspect-ratio nanorod arrays. The nanorod arrays are patterned by self-assembled silica spheres, followed by inductively coupled-plasma reactive ion etching. The fabricated nanorod arrays not only provide an omnidirectional escaping zone for photons, but also serve as waveguiding channels for the emitted light, resulting in a relatively collimated beam profile. The light output power of the VI-LED with nanorod arrays is enhanced by 40 %, compared to a conventional VI-LED. The measured far-field profiles indicate that the enhancement is mainly along the surface normal direction, within a view angle of 20 degrees.
URI: http://dx.doi.org/10.1109/LPT.2008.2010556
http://hdl.handle.net/11536/7852
ISSN: 1041-1135
DOI: 10.1109/LPT.2008.2010556
期刊: IEEE PHOTONICS TECHNOLOGY LETTERS
Volume: 21
Issue: 1-4
起始页: 257
结束页: 259
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