完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Pai, Yi-Hao | en_US |
dc.contributor.author | Meng, Fan-Shuen | en_US |
dc.contributor.author | Lin, Chun-Jung | en_US |
dc.contributor.author | Kuo, Hao-Chung | en_US |
dc.contributor.author | Hsu, Shih-Hsin | en_US |
dc.contributor.author | Chang, Yia-Chung | en_US |
dc.contributor.author | Lin, Gong-Ru | en_US |
dc.date.accessioned | 2014-12-08T15:10:17Z | - |
dc.date.available | 2014-12-08T15:10:17Z | - |
dc.date.issued | 2009-01-01 | en_US |
dc.identifier.issn | 0957-4484 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1088/0957-4484/20/3/035303 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/7858 | - |
dc.description.abstract | The Si nanopillars with high aspect ratio were fabricated by dry-etching the thin SiO(2)-covered Si substrate with a rapidly self-assembled Ni nanodot patterned mask. Aspect-ratio-dependent ultra-low reflection and anomalous luminescence of Si nanopillars are analyzed for applications in all-Si based lighting and energy transferring systems. The Si nanopillars induce an ultra-low reflectance and refractive index of 0.88% and 1.12, respectively, at 435 nm due to the air/Si mixed structure and highly roughened surface. The reflectance can be < 10% with a corresponding refractive index of < 1.80 between 190 and 670 nm. Lengthening the Si nanopillars from 150 +/- 15 to 230 +/- 20 nm further results in a decreasing reflectance, corresponding to a reduction in refractive index by Delta n/n = 18% in the visible and near-infrared wavelength region. After dry-etching an Si wafer into Si nanopillars, the weak blue-green luminescence with double consecutive peaks at 418-451 nm is attributed to the oxygen defect (O(2-))-induced radiation, which reveals less relevance with the ultra-low-reflective Si nanopillar surface. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Aspect-ratio-dependent ultra-low reflection and luminescence of dry-etched Si nanopillars on Si substrate | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1088/0957-4484/20/3/035303 | en_US |
dc.identifier.journal | NANOTECHNOLOGY | en_US |
dc.citation.volume | 20 | en_US |
dc.citation.issue | 3 | en_US |
dc.citation.epage | en_US | |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000261795500006 | - |
dc.citation.woscount | 8 | - |
顯示於類別: | 期刊論文 |