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dc.contributor.authorPai, Yi-Haoen_US
dc.contributor.authorMeng, Fan-Shuenen_US
dc.contributor.authorLin, Chun-Jungen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorHsu, Shih-Hsinen_US
dc.contributor.authorChang, Yia-Chungen_US
dc.contributor.authorLin, Gong-Ruen_US
dc.date.accessioned2014-12-08T15:10:17Z-
dc.date.available2014-12-08T15:10:17Z-
dc.date.issued2009-01-01en_US
dc.identifier.issn0957-4484en_US
dc.identifier.urihttp://dx.doi.org/10.1088/0957-4484/20/3/035303en_US
dc.identifier.urihttp://hdl.handle.net/11536/7858-
dc.description.abstractThe Si nanopillars with high aspect ratio were fabricated by dry-etching the thin SiO(2)-covered Si substrate with a rapidly self-assembled Ni nanodot patterned mask. Aspect-ratio-dependent ultra-low reflection and anomalous luminescence of Si nanopillars are analyzed for applications in all-Si based lighting and energy transferring systems. The Si nanopillars induce an ultra-low reflectance and refractive index of 0.88% and 1.12, respectively, at 435 nm due to the air/Si mixed structure and highly roughened surface. The reflectance can be < 10% with a corresponding refractive index of < 1.80 between 190 and 670 nm. Lengthening the Si nanopillars from 150 +/- 15 to 230 +/- 20 nm further results in a decreasing reflectance, corresponding to a reduction in refractive index by Delta n/n = 18% in the visible and near-infrared wavelength region. After dry-etching an Si wafer into Si nanopillars, the weak blue-green luminescence with double consecutive peaks at 418-451 nm is attributed to the oxygen defect (O(2-))-induced radiation, which reveals less relevance with the ultra-low-reflective Si nanopillar surface.en_US
dc.language.isoen_USen_US
dc.titleAspect-ratio-dependent ultra-low reflection and luminescence of dry-etched Si nanopillars on Si substrateen_US
dc.typeArticleen_US
dc.identifier.doi10.1088/0957-4484/20/3/035303en_US
dc.identifier.journalNANOTECHNOLOGYen_US
dc.citation.volume20en_US
dc.citation.issue3en_US
dc.citation.epageen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000261795500006-
dc.citation.woscount8-
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