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dc.contributor.authorYin, Jen-Fuen_US
dc.contributor.authorBhattacharya, Dibyenduen_US
dc.contributor.authorHsu, Ying-Chanen_US
dc.contributor.authorTsai, Chen-Chuanen_US
dc.contributor.authorLu, Kuang-Liehen_US
dc.contributor.authorLin, Hong-Cheuen_US
dc.contributor.authorChen, Jian-Gingen_US
dc.contributor.authorHo, Kuo-Chuanen_US
dc.date.accessioned2014-12-08T15:10:18Z-
dc.date.available2014-12-08T15:10:18Z-
dc.date.issued2009en_US
dc.identifier.issn0959-9428en_US
dc.identifier.urihttp://hdl.handle.net/11536/7870-
dc.identifier.urihttp://dx.doi.org/10.1039/b905103aen_US
dc.description.abstractTwo ruthenium sensitizers, [Ru(dcbpy)(opip)(NCS)(2)] (JF-1, dcbpy 4,4'-dicarboxylic acid-2,2'-bipyridine, opip = 2-(4-octylphenyl)-1H-imidazo[4,5-f][1,10]phenanthroline) and [Ru(dcbpy)(otip)(NCS)(2)] (JF-2, otip = 2-(5-octylthiophen-2-yl)-1H-imidazo[4,5-f][1,10]phenanthroline), with unusually high power-conversion efficiency in comparison with other ruthenium complexes containing 1,10-phenanthroline-based ligands were designed. The power-conversion efficiency of JF-2 is 20% higher than that of JF-1, due to the modification of the ancillary ligand with a thiophene moiety. The origins of this device performance diversity are illustrated by photophysical properties, electrochemical data and density functional theory (DFT) studies. The greater device performance of JF-2 compared to JF-1 was caused from the broader MLCT distribution, the appropriate localization of the frontier orbitals and the stronger driving force of the charge injection and regeneration.en_US
dc.language.isoen_USen_US
dc.titleEnhanced photovoltaic performance by synergism of light-cultivation and electronic localization for highly efficient dye-sensitized solar cellsen_US
dc.typeArticleen_US
dc.identifier.doi10.1039/b905103aen_US
dc.identifier.journalJOURNAL OF MATERIALS CHEMISTRYen_US
dc.citation.volume19en_US
dc.citation.issue38en_US
dc.citation.spage7036en_US
dc.citation.epage7042en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000270116000013-
dc.citation.woscount24-
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