Electrical properties of O-2 and N-2 annealed (Ba,Sr)TiO3 thin films

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DC Field	Value	Language
dc.contributor.author	Tsai, MS	en_US
dc.contributor.author	Sun, SC	en_US
dc.contributor.author	Tseng, TY	en_US
dc.date.accessioned	2014-12-08T15:01:10Z	-
dc.date.available	2014-12-08T15:01:10Z	-
dc.date.issued	1998-01-01	en_US
dc.identifier.issn	1058-4587	en_US
dc.identifier.uri	http://hdl.handle.net/11536/78	-
dc.description.abstract	The dielectric constant and the leakage current of (Ba,Sr)TiO3 (BST) thin films deposited on Pt bottom electrodes before and after annealing in O-2 and N-2 ambients were investigated. The crystallinity was improved after postdeposition annealing. The refractive index, dielectric constant, and leakage current of the films were strongly dependent on the annealing conditions. The O-2-annealed BST films have higher dielectric constant and lower leakage current than those annealed in N-2 ambient.	en_US
dc.language.iso	en_US	en_US
dc.subject	BST	en_US
dc.subject	annealing	en_US
dc.subject	oxygen vacancy	en_US
dc.subject	leakage current	en_US
dc.title	Electrical properties of O-2 and N-2 annealed (Ba,Sr)TiO3 thin films	en_US
dc.type	Article	en_US
dc.identifier.journal	INTEGRATED FERROELECTRICS	en_US
dc.citation.volume	21	en_US
dc.citation.issue	1-4	en_US
dc.citation.spage	173	en_US
dc.citation.epage	183	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
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