| 標題: | Electrical properties of O-2 and N-2 annealed (Ba,Sr)TiO3 thin films |
| 作者: | Tsai, MS Sun, SC Tseng, TY 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
| 關鍵字: | BST;annealing;oxygen vacancy;leakage current |
| 公開日期: | 1-Jan-1998 |
| 摘要: | The dielectric constant and the leakage current of (Ba,Sr)TiO3 (BST) thin films deposited on Pt bottom electrodes before and after annealing in O-2 and N-2 ambients were investigated. The crystallinity was improved after postdeposition annealing. The refractive index, dielectric constant, and leakage current of the films were strongly dependent on the annealing conditions. The O-2-annealed BST films have higher dielectric constant and lower leakage current than those annealed in N-2 ambient. |
| URI: | http://hdl.handle.net/11536/78 |
| ISSN: | 1058-4587 |
| 期刊: | INTEGRATED FERROELECTRICS |
| Volume: | 21 |
| Issue: | 1-4 |
| 起始頁: | 173 |
| 結束頁: | 183 |
| Appears in Collections: | Articles |
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- Electrical properties of O-2 and N-2 annealed (Ba,Sr)TiO3 thin films / Tsai, MS;Sun, SC;Tseng, TY
- Effect of bottom electrodes on resistance degradation and breakdown of (Ba, Sr)TiO3 thin films / Tsai, MS;Tseng, TY
- Low-temperature process to improve the leakage current of (Ba, Sr)TiO3 films on Pt/TiN/Ti/Si substrates / Hwang, CC;Lai, MJ;Jaing, CC;Chen, JS;Huang, S
- Electrical and dielectric behavior of MgO doped Ba0.7Sr0.3TiO3 thin films on Al2O3 substrate / Lee, SY;Tseng, TY
- Effect of bottom electrode materials and annealing treatments on the electrical characteristics of Ba0.47Sr0.53TiO3 film capacitors / Tsai, MS;Sun, SC;Tseng, TY
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