标题: | Electrical properties of O-2 and N-2 annealed (Ba,Sr)TiO3 thin films |
作者: | Tsai, MS Sun, SC Tseng, TY 电子工程学系及电子研究所 Department of Electronics Engineering and Institute of Electronics |
关键字: | BST;annealing;oxygen vacancy;leakage current |
公开日期: | 1-一月-1998 |
摘要: | The dielectric constant and the leakage current of (Ba,Sr)TiO3 (BST) thin films deposited on Pt bottom electrodes before and after annealing in O-2 and N-2 ambients were investigated. The crystallinity was improved after postdeposition annealing. The refractive index, dielectric constant, and leakage current of the films were strongly dependent on the annealing conditions. The O-2-annealed BST films have higher dielectric constant and lower leakage current than those annealed in N-2 ambient. |
URI: | http://hdl.handle.net/11536/78 |
ISSN: | 1058-4587 |
期刊: | INTEGRATED FERROELECTRICS |
Volume: | 21 |
Issue: | 1-4 |
起始页: | 173 |
结束页: | 183 |
显示于类别: | Articles |
文件中的档案:
If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.