标题: Electrical properties of O-2 and N-2 annealed (Ba,Sr)TiO3 thin films
作者: Tsai, MS
Sun, SC
Tseng, TY
电子工程学系及电子研究所
Department of Electronics Engineering and Institute of Electronics
关键字: BST;annealing;oxygen vacancy;leakage current
公开日期: 1-一月-1998
摘要: The dielectric constant and the leakage current of (Ba,Sr)TiO3 (BST) thin films deposited on Pt bottom electrodes before and after annealing in O-2 and N-2 ambients were investigated. The crystallinity was improved after postdeposition annealing. The refractive index, dielectric constant, and leakage current of the films were strongly dependent on the annealing conditions. The O-2-annealed BST films have higher dielectric constant and lower leakage current than those annealed in N-2 ambient.
URI: http://hdl.handle.net/11536/78
ISSN: 1058-4587
期刊: INTEGRATED FERROELECTRICS
Volume: 21
Issue: 1-4
起始页: 173
结束页: 183
显示于类别:Articles


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