標題: | Electrical properties of O-2 and N-2 annealed (Ba,Sr)TiO3 thin films |
作者: | Tsai, MS Sun, SC Tseng, TY 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | BST;annealing;oxygen vacancy;leakage current |
公開日期: | 1-一月-1998 |
摘要: | The dielectric constant and the leakage current of (Ba,Sr)TiO3 (BST) thin films deposited on Pt bottom electrodes before and after annealing in O-2 and N-2 ambients were investigated. The crystallinity was improved after postdeposition annealing. The refractive index, dielectric constant, and leakage current of the films were strongly dependent on the annealing conditions. The O-2-annealed BST films have higher dielectric constant and lower leakage current than those annealed in N-2 ambient. |
URI: | http://hdl.handle.net/11536/78 |
ISSN: | 1058-4587 |
期刊: | INTEGRATED FERROELECTRICS |
Volume: | 21 |
Issue: | 1-4 |
起始頁: | 173 |
結束頁: | 183 |
顯示於類別: | 期刊論文 |