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A novel self-aligned field induced drain polycrystalline silicon thin film transistor fabricated by using a selective side etch process 112

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五月 2024 六月 2024 七月 2024 八月 2024 九月 2024 十月 2024 十一月 2024
A novel self-aligned field induced drain polycrystalline silicon thin film transistor fabricated by using a selective side etch process 3 0 0 0 0 0 0

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