完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Liu, Po-Tsun | en_US |
dc.contributor.author | Chou, Yi-Teh | en_US |
dc.contributor.author | Kao, Yi-Yu | en_US |
dc.date.accessioned | 2014-12-08T15:10:21Z | - |
dc.date.available | 2014-12-08T15:10:21Z | - |
dc.date.issued | 2009 | en_US |
dc.identifier.issn | 1099-0062 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/7905 | - |
dc.identifier.uri | http://dx.doi.org/10.1149/1.3007423 | en_US |
dc.description.abstract | Supercritical fluid (SCF) technology was proposed to improve the dielectric properties of electron-gun evaporated aluminum oxide (AlO(x)) film in this work. The leakage current of AlO(x) film deposited at room temperature was suppressed significantly from 10(-4) to 10(-10) A at a bias voltage of -20 V after the SCF treatment mixed with water and propyl alcohol. The evolution of the leakage conduction mechanism was confirmed theoretically from trap-assisted quantum tunneling to the Schottky emission process due to the reduction of electric traps in the AlO(x) dielectric film. In addition, our work demonstrated the application of SCF-treated AlO(x) gate dielectric to a pentacene-based thin-film transistor. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | aluminium | en_US |
dc.subject | dielectric thin films | en_US |
dc.subject | leakage currents | en_US |
dc.subject | organic semiconductors | en_US |
dc.subject | Schottky effect | en_US |
dc.subject | thin film transistors | en_US |
dc.subject | tunnelling | en_US |
dc.title | Improvement of Electron-Gun Evaporated Aluminum Oxide for Pentacene Thin-Film Transistor | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1149/1.3007423 | en_US |
dc.identifier.journal | ELECTROCHEMICAL AND SOLID STATE LETTERS | en_US |
dc.citation.volume | 12 | en_US |
dc.citation.issue | 1 | en_US |
dc.citation.spage | H11 | en_US |
dc.citation.epage | H13 | en_US |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | 顯示科技研究所 | zh_TW |
dc.contributor.department | Department of Photonics | en_US |
dc.contributor.department | Institute of Display | en_US |
dc.identifier.wosnumber | WOS:000260873700015 | - |
dc.citation.woscount | 7 | - |
顯示於類別: | 期刊論文 |