標題: Illumination-Assisted Negative Bias Temperature Instability Degradation in Low Temperature Polycrystalline Silicon Thin-Film Transistors
作者: Lin, Chia-Sheng
Chen, Ying-Chung
Chang, Ting-Chang
Hsu, Wei-Che
Chen, Shih-Ching
Li, Hung-Wei
Tu, Kuan-Jen
Jian, Fu-Yen
Chen, Te-Chih
光電工程學系
Department of Photonics
關鍵字: elemental semiconductors;grain boundaries;insulated gate field effect transistors;interface states;semiconductor device reliability;silicon;thin film transistors
公開日期: 2009
摘要: In this work, the negative bias temperature instability (NBTI) in low temperature polycrystalline silicon thin-film transistors in a darkened and in an illuminated environment was investigated. Experimental results reveal that the generation of interface state density (N(it)) showed no change between the different NBTI stresses. Nevertheless, the degradation of the grain boundary trap (N(trap)) under illumination was more significant than that in the darkened environment. This phenomenon is mainly caused by the extra number of holes generated during the illuminated NBTI stress.
URI: http://hdl.handle.net/11536/7906
http://dx.doi.org/10.1149/1.3115400
ISSN: 1099-0062
DOI: 10.1149/1.3115400
期刊: ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume: 12
Issue: 6
起始頁: H229
結束頁: H232
Appears in Collections:Articles