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dc.contributor.authorSun, W. C.en_US
dc.contributor.authorChang, W. L.en_US
dc.contributor.authorChen, C. H.en_US
dc.contributor.authorDu, C. H.en_US
dc.contributor.authorWang, T. Y.en_US
dc.contributor.authorWang, T.en_US
dc.contributor.authorLan, C. W.en_US
dc.date.accessioned2014-12-08T15:10:21Z-
dc.date.available2014-12-08T15:10:21Z-
dc.date.issued2009en_US
dc.identifier.issn1099-0062en_US
dc.identifier.urihttp://hdl.handle.net/11536/7908-
dc.identifier.urihttp://dx.doi.org/10.1149/1.3194252en_US
dc.description.abstractlThe effects of passivation on monocrystalline silicon solar cells were investigated. Al(2)O(3) and SiO(2) films, prepared by atomic layer deposition and thermal oxidation, respectively, were used as passivation layers. Passivation using a monolayer (SiO(2)) yielded a cell efficiency of 17.5%. However, the Al(2)O(3)/SiO(2) bilayer structure drastically increased cell efficiency to 20.1%. Quantum efficiency results revealed a significant improvement in the IR range, suggesting that bilayer passivation was effective on the back of a solar cell in providing a high energy conversion efficiency. (C) 2009 The Electrochemical Society. [DOI: 10.1149/1.3194252] All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleHigh Efficiency Silicon Solar Cells with Bilayer Passivation Structureen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.3194252en_US
dc.identifier.journalELECTROCHEMICAL AND SOLID STATE LETTERSen_US
dc.citation.volume12en_US
dc.citation.issue10en_US
dc.citation.spageH388en_US
dc.citation.epageH391en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000268962800022-
dc.citation.woscount9-
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