完整後設資料紀錄
DC 欄位語言
dc.contributor.authorHung, Tsung-Chien_US
dc.contributor.authorChen, Chia-Fuen_US
dc.contributor.authorWhang, Wha-Tzongen_US
dc.date.accessioned2014-12-08T15:10:21Z-
dc.date.available2014-12-08T15:10:21Z-
dc.date.issued2009en_US
dc.identifier.issn1099-0062en_US
dc.identifier.urihttp://hdl.handle.net/11536/7914-
dc.identifier.urihttp://dx.doi.org/10.1149/1.3099325en_US
dc.description.abstractWe have used bias-assisted microwave plasma chemical vapor deposition to synthesize (i) two-dimensional carbon nanowalls [(2D CNWs), monolayer] and (ii) three-dimensional carbon nanowalls [(3D CNWs), double-layer] on carbon cloth in a CH(4)/CO(2) system. The specific surface area of the 3D CNW electrode (1580 m(2)/g) was considerably larger than that of the 2D CNW electrode (364 m(2)/g). This higher surface area and more porous structure of the 3D CNW electrode resulted in its capacitance reaching as high as ca. 198 F/g at a scan rate of 10 mV/s. Electrochemical measurements suggested that this 3D electrode is a promising material for application in electrical storage devices.en_US
dc.language.isoen_USen_US
dc.subjectcapacitanceen_US
dc.subjectcarbonen_US
dc.subjectelectrochemical electrodesen_US
dc.subjectnanofabricationen_US
dc.subjectnanostructured materialsen_US
dc.subjectplasma CVDen_US
dc.titleDeposition of Carbon Nanowall Flowers on Two-Dimensional Sheet for Electrochemical Capacitor Applicationen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.3099325en_US
dc.identifier.journalELECTROCHEMICAL AND SOLID STATE LETTERSen_US
dc.citation.volume12en_US
dc.citation.issue6en_US
dc.citation.spageK41en_US
dc.citation.epageK44en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000265085000025-
dc.citation.woscount22-
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