以有機金屬化學氣相沈積法製作無極性氮化鎵發光元件以及功能性奈米結構

Abstract

本論文旨在探討三五族光電半導體元件包含不可見之紫外線發光二極體(invisible ultraviolet light-emitting diode, LED)、紅光氮化銦鎵多重量子點發光層(red emission InGaN multiple quantum dots layers)、無極性a-plane氮化鎵成長於r-plane氧化鋁基板(non-polar a-plane GaN on r-plane sapphire substrate)以及在具極性c-plane與無極性a-plane多重量子井中內部量子效率趨勢以及發光二極體元件特性比較之相關研究。對於半導體發光元件而言要使其具有高輸出功率以及高穩定性的輸出性能，元件磊晶晶體品質(epitaxial crystal quality)以及元件磊晶結構設計上實屬於相當重要一環，所以磊晶品質之提升亦在討論之列。此外，幾個重要的議題包括：元件的接面溫度之計算、內部量子效率之計算、壓電場效應之消除也將進行原理探討與實驗分析驗證。

In this dissertation, the improvement in operation performance of III-V optoelectronic semiconductor light emitting devices and fundamental materials characteristics, which include invisible ultraviolet (UV) light-emitting diode (LED), red emission InGaN multiple quantum dots (MQDs) layers, non-polar a-plane GaN on r-plane sapphire substrate, internal quantum efficiency (IQE) behavior and LED characteristics between c-plane and a-plane multiple quantum well (MQW) were studied. The content include those key technologies for semiconductor light emitting devices to possess better output performance and high operation stabilities are the epitaxial crystal quality and the design of epitaxial structure. Moreover, several important issues including evaluating of device junction temperature, internal quantum efficiency, and piezoelectric field elimination all are discussed by theoretical forecast and experimental analysis.