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dc.contributor.authorChang, Wen-Haoen_US
dc.contributor.authorChen, Wen-Yenen_US
dc.contributor.authorChang, Hsiang-Szuen_US
dc.contributor.authorHsieh, Tung-Poen_US
dc.contributor.authorChyi, Jen-Innen_US
dc.contributor.authorHsu, Tzu-Minen_US
dc.date.accessioned2014-12-08T15:10:22Z-
dc.date.available2014-12-08T15:10:22Z-
dc.date.issued2007en_US
dc.identifier.isbn978-0-7354-0397-0en_US
dc.identifier.issn0094-243Xen_US
dc.identifier.urihttp://hdl.handle.net/11536/7924-
dc.description.abstractAn efficient single-photon source based on low-density InGaAs quantum dots in a photonic-crystal nanocavity is demonstrated. The single-photon source features the effects of photonic band gap, yielding a single-mode spontaneous emission coupling efficiency as high as beta=92% and a linear polarization degree up to p=95%. This appealing performance makes it well-suited for practical implementation of polarization-encoded schemes in quantum cryptography.en_US
dc.language.isoen_USen_US
dc.subjectquantum dotsen_US
dc.subjectsingle-photon sourcesen_US
dc.subjectphoton antibunchingen_US
dc.subjectcavity QEDen_US
dc.titleLow-density quantum dots embedded in photonic-crystal nanocavities for single-photon generationsen_US
dc.typeProceedings Paperen_US
dc.identifier.journalPhysics of Semiconductors, Pts A and Ben_US
dc.citation.volume893en_US
dc.citation.spage907en_US
dc.citation.epage908en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000246281800446-
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