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dc.contributor.authorYang, M. D.en_US
dc.contributor.authorLiu, Y. W.en_US
dc.contributor.authorShen, J. L.en_US
dc.contributor.authorChen, C. W.en_US
dc.contributor.authorChi, G. C.en_US
dc.contributor.authorLin, T. Y.en_US
dc.contributor.authorChou, W. C.en_US
dc.contributor.authorLo, M. H.en_US
dc.contributor.authorKuo, H. C.en_US
dc.contributor.authorLu, T. C.en_US
dc.date.accessioned2014-12-08T15:10:22Z-
dc.date.available2014-12-08T15:10:22Z-
dc.date.issued2009-01-01en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3056383en_US
dc.identifier.urihttp://hdl.handle.net/11536/7927-
dc.description.abstractThis work investigates the dependence of the hot-electron energy relaxation in InN epilayers on electron density. From the high-energy tail of photoluminescence, the electron temperature of the hot electrons was determined. Acoustic phonons have an important role in the energy relaxation of the hot electrons. The density-dependent electron energy loss rate in InN can be explained by a combination of longitudinal optical and acoustic phonon emissions. A slowing of energy loss rate at high electron densities was observed and attributed to piezoelectric coupling to acoustic phonons. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3056383]en_US
dc.language.isoen_USen_US
dc.titleDensity-dependent energy relaxation of hot electrons in InN epilayersen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3056383en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume105en_US
dc.citation.issue1en_US
dc.citation.epageen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000262534100059-
dc.citation.woscount7-
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