完整後設資料紀錄
DC 欄位語言
dc.contributor.authorHu, Chih-Weien_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorTu, Chun-Haoen_US
dc.contributor.authorChiang, Cheng-Nengen_US
dc.contributor.authorLin, Chao-Chengen_US
dc.contributor.authorLee, Sheng-Weien_US
dc.contributor.authorChang, Chun-Yenen_US
dc.contributor.authorSze, Simon M.en_US
dc.contributor.authorTseng, Tseung-Yuenen_US
dc.date.accessioned2014-12-08T15:10:28Z-
dc.date.available2014-12-08T15:10:28Z-
dc.date.issued2009en_US
dc.identifier.issn0013-4651en_US
dc.identifier.urihttp://hdl.handle.net/11536/7992-
dc.identifier.urihttp://dx.doi.org/10.1149/1.3167386en_US
dc.description.abstractIn this work, a NiSiGe mixed film was deposited by the cosputtering approach. The rapidly thermal treatment condition was executed at 600 degrees C for 30 s in nitrogen ambient to form the nanocrystal structure. From the results of the transmission electron microscopy, the annealed NiSiGe film reveals a larger nanocrystal size and density distribution than pure NiSi. X-ray photoelectron spectroscopy analyses were used to confirm that the Ge elements provide the additional nucleation centers and enhance the nanocrystal formation during the thermal process. Raman spectroscopy and an energy-dispersive spectrometer also exhibit the compositions of nanocrystals including Ni, Si, and Ge elements. With the better formation process, a remarkable improvement of memory effect is observed by comparing with the NiSi and NiSiGe nanocrystal memory devices. Also, the NiSiGe nanocrystal device shows a better retention characteristic due to the lower quantum confinement effect.en_US
dc.language.isoen_USen_US
dc.subjectgermaniumen_US
dc.subjectnanostructured materialsen_US
dc.subjectnickel alloysen_US
dc.subjectnucleationen_US
dc.subjectRaman spectraen_US
dc.subjectrandom-access storageen_US
dc.subjectsemiconductor dopingen_US
dc.subjectsilicon alloysen_US
dc.subjectsputter depositionen_US
dc.subjectthin filmsen_US
dc.subjecttransmission electron microscopyen_US
dc.subjectX-ray photoelectron spectraen_US
dc.titleEnhancement of NiSi-Based Nanocrystal Formation by Incorporating Ge Elements for Nonvolatile Memory Devicesen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.3167386en_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.citation.volume156en_US
dc.citation.issue9en_US
dc.citation.spageH751en_US
dc.citation.epageH755en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000268405400061-
dc.citation.woscount2-
顯示於類別:期刊論文


文件中的檔案:

  1. 000268405400061.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。