Bottom-Contact n-Channel Organic Thin-Film Transistors with Naphthalene-Based Derivatives

Abstract

We investigated bottom-contact organic thin-film transistors based on n-benzyl naphthalene 1,4,5,8-tetracarboxylic diimides. The electrical characteristics were tested in both air and vacuum environments. n-Type semiconductors which are modified by fluorinated imide can be operated in ambient environment. The close packing of the fluorinated ester imide group leads to carrier mobility as high as 1.6x10(-2) cm(2) V(-1) s(-1). The short distance between each molecule can be found via a single-crystal structure.