完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chen, Fang-Chung | en_US |
dc.contributor.author | Huang, Yu-Jen | en_US |
dc.date.accessioned | 2014-12-08T15:10:28Z | - |
dc.date.available | 2014-12-08T15:10:28Z | - |
dc.date.issued | 2009 | en_US |
dc.identifier.issn | 1099-0062 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/7999 | - |
dc.identifier.uri | http://dx.doi.org/10.1149/1.3117250 | en_US |
dc.description.abstract | Air stable ambipolar organic field-effect transistors containing p/n heterojunctions are achieved by passivating the electron trapping sites on the SiO(2) surface. The morphology of the heterojunctions is controlled by the film thicknesses of p- and n-channel semiconductors, thereby affecting the device air stability and the electrical characteristics. Further, air stable complementary-like inverters, which are able to work both in the first and the third quadrants with a high gain up to 30, are also demonstrated. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | invertors | en_US |
dc.subject | organic field effect transistors | en_US |
dc.subject | passivation | en_US |
dc.subject | p-n heterojunctions | en_US |
dc.title | Air Stable Ambipolar Organic Field-Effect Transistors and Complementary-Like Inverters Prepared with Surface-Modified Gate Dielectrics | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1149/1.3117250 | en_US |
dc.identifier.journal | ELECTROCHEMICAL AND SOLID STATE LETTERS | en_US |
dc.citation.volume | 12 | en_US |
dc.citation.issue | 7 | en_US |
dc.citation.spage | H252 | en_US |
dc.citation.epage | H255 | en_US |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | 顯示科技研究所 | zh_TW |
dc.contributor.department | Department of Photonics | en_US |
dc.contributor.department | Institute of Display | en_US |
dc.identifier.wosnumber | WOS:000266207100023 | - |
dc.citation.woscount | 2 | - |
顯示於類別: | 期刊論文 |